Processing for highly emissive CZ-silicon by depositing stressed sol-gel films

S. Abedrabbo, A. T. Fiory, N. Ravindra

Research output: Contribution to journalArticle

Abstract

Enhanced band-gap emission from Czochralski silicon substrates of up to ~100 times is reported. This was achieved by processing for a stressed interface resulting from baked and annealed silica films prepared by sol-gel processes. The active dopants include but are not limited to erbium and are prepared with tetraethylorthosilicate (TEOS) while forming the active precursors using oxide and nitrate forms of the rare earth. In addition, annealed films produce infrared emission in the 1.5-μm band from erbium ions in the film. Steady-state photoluminescence studies indicate that a strong correlation of the intensity of the emission at the band gap to the stress formed at the interface and is a direct function of the annealing temperature of the silica films, independent from the known erbium 4f emission bands.

Original languageEnglish (US)
Pages (from-to)643-648
Number of pages6
JournalJOM
Volume66
Issue number4
DOIs
StatePublished - Jan 1 2014

Fingerprint

Erbium
Silicon
Sol-gels
Processing
Silicon Dioxide
Energy gap
Silica
Nitrates
Oxides
Sol-gel process
Rare earths
Photoluminescence
Doping (additives)
Annealing
Ions
Infrared radiation
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Materials Science(all)

Cite this

Abedrabbo, S. ; Fiory, A. T. ; Ravindra, N. / Processing for highly emissive CZ-silicon by depositing stressed sol-gel films. In: JOM. 2014 ; Vol. 66, No. 4. pp. 643-648.
@article{e03647d214c046d2a0b216d7984906cd,
title = "Processing for highly emissive CZ-silicon by depositing stressed sol-gel films",
abstract = "Enhanced band-gap emission from Czochralski silicon substrates of up to ~100 times is reported. This was achieved by processing for a stressed interface resulting from baked and annealed silica films prepared by sol-gel processes. The active dopants include but are not limited to erbium and are prepared with tetraethylorthosilicate (TEOS) while forming the active precursors using oxide and nitrate forms of the rare earth. In addition, annealed films produce infrared emission in the 1.5-μm band from erbium ions in the film. Steady-state photoluminescence studies indicate that a strong correlation of the intensity of the emission at the band gap to the stress formed at the interface and is a direct function of the annealing temperature of the silica films, independent from the known erbium 4f emission bands.",
author = "S. Abedrabbo and Fiory, {A. T.} and N. Ravindra",
year = "2014",
month = "1",
day = "1",
doi = "https://doi.org/10.1007/s11837-014-0922-2",
language = "English (US)",
volume = "66",
pages = "643--648",
journal = "JOM",
issn = "1047-4838",
publisher = "Minerals, Metals and Materials Society",
number = "4",

}

Processing for highly emissive CZ-silicon by depositing stressed sol-gel films. / Abedrabbo, S.; Fiory, A. T.; Ravindra, N.

In: JOM, Vol. 66, No. 4, 01.01.2014, p. 643-648.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Processing for highly emissive CZ-silicon by depositing stressed sol-gel films

AU - Abedrabbo, S.

AU - Fiory, A. T.

AU - Ravindra, N.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Enhanced band-gap emission from Czochralski silicon substrates of up to ~100 times is reported. This was achieved by processing for a stressed interface resulting from baked and annealed silica films prepared by sol-gel processes. The active dopants include but are not limited to erbium and are prepared with tetraethylorthosilicate (TEOS) while forming the active precursors using oxide and nitrate forms of the rare earth. In addition, annealed films produce infrared emission in the 1.5-μm band from erbium ions in the film. Steady-state photoluminescence studies indicate that a strong correlation of the intensity of the emission at the band gap to the stress formed at the interface and is a direct function of the annealing temperature of the silica films, independent from the known erbium 4f emission bands.

AB - Enhanced band-gap emission from Czochralski silicon substrates of up to ~100 times is reported. This was achieved by processing for a stressed interface resulting from baked and annealed silica films prepared by sol-gel processes. The active dopants include but are not limited to erbium and are prepared with tetraethylorthosilicate (TEOS) while forming the active precursors using oxide and nitrate forms of the rare earth. In addition, annealed films produce infrared emission in the 1.5-μm band from erbium ions in the film. Steady-state photoluminescence studies indicate that a strong correlation of the intensity of the emission at the band gap to the stress formed at the interface and is a direct function of the annealing temperature of the silica films, independent from the known erbium 4f emission bands.

UR - http://www.scopus.com/inward/record.url?scp=84898833656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898833656&partnerID=8YFLogxK

U2 - https://doi.org/10.1007/s11837-014-0922-2

DO - https://doi.org/10.1007/s11837-014-0922-2

M3 - Article

VL - 66

SP - 643

EP - 648

JO - JOM

JF - JOM

SN - 1047-4838

IS - 4

ER -