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RADIATION-TOLERANT, SIDEWALL-HARDENED SOI/MOS TRANSISTORS.
S. S. Tsao
, D. M. Fleetwood
, H. T. Weaver
,
L. Pfeiffer
, G. K. Celler
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
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Dive into the research topics of 'RADIATION-TOLERANT, SIDEWALL-HARDENED SOI/MOS TRANSISTORS.'. Together they form a unique fingerprint.
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Keyphrases
Silicon-on-insulator
100%
MOS Transistor
100%
Sidewall
100%
Radiation Tolerance
100%
Transistor
100%
Passivated
80%
SIMOX
40%
Recrystallized
40%
Edge Channels
40%
Radiation Condition
20%
Radiation Effects
20%
No Significant Difference
20%
Radiation Response
20%
N-channel
20%
Threshold Voltage Shift
20%
Total Radiation
20%
Backchannel
20%
Front-back
20%
Total Dose Response
20%
Channel Conduction
20%
Edgeless
20%
Edge Configuration
20%
Engineering
Silicon on Insulator
100%
Side Wall
100%
Transistor
100%
Radiation Effect
14%
Silicon on Insulator Material
14%
Material Science
Silicon
100%
Transistor
100%
Silicon on Insulator Material
14%