RANGE OF BORON IONS IN POLYMERS: A SIMS STUDY.

D. M. Tennant, A. H. Dayem, R. E. Howard, E. H. Westerwick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Polymers are often used as ion implantation masks for semiconductor processing, but there is a wide (nearly an order of magnitude) disagreement among calculated values that appear in the literature on the ranges of light ions in these materials. Since shrinking device geometries require reduced mask thicknesses to maintain high resolution, accurate knowledge of ion ranges is important. Secondary ion mass spectroscopy (SIMS) has the sensitivity to determine profiles of implanted ions in many materials, but direct measurements on insulators is difficult because of charging effects. The authors have developed a technique to measure these profiles using variable polymer thicknesses and subsequent SIMS measurements in the underlying Si substrate. An analysis of the resulting SIMS profiles allows measurement of the projected range and standard deviation of the distribution as a function of energy. The range parameters for boron in two polymers are reported and compared with published calculations as well as with experimental values determined from indirect techniques.

Original languageEnglish (US)
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages458-461
Number of pages4
Volume3
Edition1
DOIs
StatePublished - Jan 1984
Externally publishedYes
EventProc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA
Duration: May 29 1984Jun 1 1984

Other

OtherProc of the 1984 Int Symp on Electron, Ion, and Photon Beams
CityTarrytown, NY, USA
Period5/29/846/1/84

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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