Rapid thermal activation and diffusion of boron and phosphorus implants

A. T. Fiory, S. G. Chawda, S. Madishetty, V. R. Mehta, N. M. Ravindra, S. P. McCoy, M. E. Lefrançois, K. K. Bourdelle, H. J.L. Gossmann, A. Agarwal

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.

Original languageEnglish (US)
Pages227-231
Number of pages5
DOIs
StatePublished - 2001
Event9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States
Duration: Sep 25 2001Sep 29 2001

Other

Other9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001
Country/TerritoryUnited States
CityAnchorage
Period9/25/019/29/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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