Recrystallization of carbon-aluminum ion coimplanted epitaxial silicon carbide - Evidenced by room temperature optical measurements

Z. C. Feng, S. J. Chua, K. Tone, J. H. Zhao

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Effects of carbon (C)-aluminum (Al) coimplantation and annealing of epitaxial n-type 6H polytype silicon carbide (6H-SiC) have been studied by Raman scattering, photoluminescence (PL), and optical transmission (OT), measured at room temperature. The amorphization and damage of 6H-SiC due to ion implantation are observed. The recovery of the 6H-SiC crystallinity by a high temperature annealing at 1550°C for 30 min after C-Al implantation has been confirmed from the Raman, PL, and OT measurements. Evidences of the recrystallization of C-Al coimplanted epitaxial 6H-SiC are obtained nondestructively by these three optical techniques.

Original languageEnglish (US)
Pages (from-to)472-474
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number4
DOIs
StatePublished - Jul 26 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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