Relationship between hole trapping and interface state generation in metal-oxide-silicon structures

S. J. Wang, J. M. Sung, S. A. Lyon

Research output: Contribution to journalArticle

74 Scopus citations

Abstract

We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 Å from the Si/SiO2 interface (near-interfacial hole trap) and then transfer to within 18 Å of the interface (interfacial trapped holes). Finally, the hole captures an electron and becomes an interface state. The transfer process between near-interfacial and interfacial trapped holes does not seem to be a simple release-capture process. Rather it appears to involve a complicated migration of the trapped hole defect towards the interface. Radiation-hardened oxides are shown to have a similar number of near-interfacial traps, but these traps are shallower than those in the soft oxides.

Original languageEnglish (US)
Pages (from-to)1431-1433
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number17
DOIs
StatePublished - Dec 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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