TY - JOUR
T1 - Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr 0.52Ti0.48)O3 thin films
AU - Lee, J.
AU - Esayan, S.
AU - Prohaska, J.
AU - Safari, A.
PY - 1994
Y1 - 1994
N2 - The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (∼hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.
AB - The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (∼hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.
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U2 - https://doi.org/10.1063/1.111969
DO - https://doi.org/10.1063/1.111969
M3 - Article
VL - 64
SP - 294
EP - 296
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -