Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability

Research output: Contribution to journalArticle

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Abstract

This work investigates the role of hydrogen and nitrogen in a GeHf O2 Al gate stack by comparing the negative bias temperature instability (NBTI) characteristics with and without the surface nitridation of Ge surface prior to Hf O2 deposition. Flatband voltage shift, change in interface state density, and stress induced leakage current were also monitored as a function of stress time. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from the dangling bond sites. However, the low n value in power law dependence of flatband voltage shift suggests diffusion of molecular hydrogen absorbed at the interface.

Original languageEnglish (US)
Article number023511
JournalApplied Physics Letters
Volume92
Issue number2
DOIs
StatePublished - Jan 28 2008

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hydrogen
shift
electric potential
temperature
leakage
nitrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{f55ee0ab01ea4316825c6f72dfc7b913,
title = "Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability",
abstract = "This work investigates the role of hydrogen and nitrogen in a GeHf O2 Al gate stack by comparing the negative bias temperature instability (NBTI) characteristics with and without the surface nitridation of Ge surface prior to Hf O2 deposition. Flatband voltage shift, change in interface state density, and stress induced leakage current were also monitored as a function of stress time. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from the dangling bond sites. However, the low n value in power law dependence of flatband voltage shift suggests diffusion of molecular hydrogen absorbed at the interface.",
author = "N. Rahim and Durgamadhab Misra",
year = "2008",
month = "1",
day = "28",
doi = "https://doi.org/10.1063/1.2827567",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "2",

}

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability. / Rahim, N.; Misra, Durgamadhab.

In: Applied Physics Letters, Vol. 92, No. 2, 023511, 28.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability

AU - Rahim, N.

AU - Misra, Durgamadhab

PY - 2008/1/28

Y1 - 2008/1/28

N2 - This work investigates the role of hydrogen and nitrogen in a GeHf O2 Al gate stack by comparing the negative bias temperature instability (NBTI) characteristics with and without the surface nitridation of Ge surface prior to Hf O2 deposition. Flatband voltage shift, change in interface state density, and stress induced leakage current were also monitored as a function of stress time. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from the dangling bond sites. However, the low n value in power law dependence of flatband voltage shift suggests diffusion of molecular hydrogen absorbed at the interface.

AB - This work investigates the role of hydrogen and nitrogen in a GeHf O2 Al gate stack by comparing the negative bias temperature instability (NBTI) characteristics with and without the surface nitridation of Ge surface prior to Hf O2 deposition. Flatband voltage shift, change in interface state density, and stress induced leakage current were also monitored as a function of stress time. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from the dangling bond sites. However, the low n value in power law dependence of flatband voltage shift suggests diffusion of molecular hydrogen absorbed at the interface.

UR - http://www.scopus.com/inward/record.url?scp=38349091967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38349091967&partnerID=8YFLogxK

U2 - https://doi.org/10.1063/1.2827567

DO - https://doi.org/10.1063/1.2827567

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023511

ER -