Abstract
The different roles of Lu and La in the intergranular film in silicon nitride on the growth morphology are investigated via molecular dynamics simulations. While advanced microscopy shows each rare earth on the prism surface at room temperature, each additive affects the outward (perpendicular) growth of the surface differently. The simulations show the effect of elevated temperature on the adsorption of La and Lu on this surface that affects growth and provides the atomistic mechanism for the different growth morphology.
Original language | English (US) |
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Pages (from-to) | 97-100 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 113 |
DOIs | |
State | Published - 2016 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
Keywords
- Interfaces
- Intergranular films
- Molecular simulations
- Rare earths