Self-passivated copper gates for thin film silicon transistors

H. Sirringhaus, S. D. Theiss, Antoine Kahn, S. Wagner

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A solution to the thin film silicon transistor gate metallization problem in active matrix liquid crystal displays is demonstrated in the form of a self-passivation process for copper. Bottom-level copper (Cu) lines are passivated by a self-aligned CrOx encapsulation formed by surface segregation of chromium (Cr) from dilute Cu1-xCrx alloys (x = 0.1-0.3) at 400 °C. The encapsulation is an efficient barrier for Cu diffusion into the SiNx gate insulator during the plasma deposition and transistor processing, and solves the problems of oxidation and adhesion to the glass substrate. Gate line resistivities are 4.5 to 7.5 μΩcm depending on the initial Cr concentration. The performance of self-passivated Cu-gate thin film transistors is comparable to that of transistors with refractory metal gates.

Original languageEnglish (US)
Pages (from-to)59-64
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume446
StatePublished - Jan 1 1997

Fingerprint

silicon transistors
Silicon
Copper
Transistors
Chromium
Encapsulation
Thin films
copper
thin films
transistors
Surface segregation
Plasma deposition
Refractory metals
Thin film transistors
Metallizing
chromium
Liquid crystal displays
Passivation
Adhesion
refractory metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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Self-passivated copper gates for thin film silicon transistors. / Sirringhaus, H.; Theiss, S. D.; Kahn, Antoine; Wagner, S.

In: Materials Research Society Symposium - Proceedings, Vol. 446, 01.01.1997, p. 59-64.

Research output: Contribution to journalArticle

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