Solid-state disconnects based on SiC power JFETs

P. Alexandrov; X. Li; L. Fursin; C. Dries; J. Zhao; T. Burke

doi:10.1109/VPPC.2011.6043095

Solid-state disconnects based on SiC power JFETs

P. Alexandrov
, X. Li
, L. Fursin
, C. Dries
, J. Zhao
, T. Burke

School of Engineering, Electrical & Computer Engineering

Rutgers, The State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

Original language	American English
Title of host publication	2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011
DOIs	https://doi.org/10.1109/VPPC.2011.6043095
State	Published - 2011
Event	7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011 - Chicago, IL, United States Duration: Sep 6 2011 → Sep 9 2011

Publication series

Name	2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011

Conference

Conference	7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011
Country/Territory	United States
City	Chicago, IL
Period	9/6/11 → 9/9/11

ASJC Scopus subject areas

Automotive Engineering

Access to Document

10.1109/VPPC.2011.6043095

Cite this

@inproceedings{be8081bb4a33466d9fe69bd9f2d9bfe6,

title = "Solid-state disconnects based on SiC power JFETs",

abstract = "This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7\% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.",

author = "P. Alexandrov and X. Li and L. Fursin and C. Dries and J. Zhao and T. Burke",

year = "2011",

doi = "10.1109/VPPC.2011.6043095",

language = "American English",

isbn = "9781612842486",

series = "2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011",

booktitle = "2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011",

note = "7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011 ; Conference date: 06-09-2011 Through 09-09-2011",

}

Alexandrov, P, Li, X, Fursin, L, Dries, C, Zhao, J & Burke, T 2011, Solid-state disconnects based on SiC power JFETs. in 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011., 6043095, 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011, 7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011, Chicago, IL, United States, 9/6/11. https://doi.org/10.1109/VPPC.2011.6043095

TY - GEN

T1 - Solid-state disconnects based on SiC power JFETs

AU - Alexandrov, P.

AU - Li, X.

AU - Fursin, L.

AU - Dries, C.

AU - Zhao, J.

AU - Burke, T.

PY - 2011

Y1 - 2011

N2 - This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

AB - This work presents the development of a novel bidirectional Solid State Disconnect (SSD) module based on Silicon Carbide (SiC) Junction Field Effect Transistors (JFET) capable of a fast disconnect action upon reaching a preset value of the current through the SSD. Due to the superior properties of SiC material and the low on-resistance of the normally-on SiC JFET, a very low insertion loss can be realized for high power applications. For application in 10kW power systems an insertion loss of less than 0.7% was achieved with a current fall time of 0.26μs for trip currents of about 70A. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

UR - https://www.scopus.com/pages/publications/80155207164

UR - https://www.scopus.com/pages/publications/80155207164#tab=citedBy

U2 - 10.1109/VPPC.2011.6043095

DO - 10.1109/VPPC.2011.6043095

M3 - Conference contribution

SN - 9781612842486

T3 - 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011

BT - 2011 IEEE Vehicle Power and Propulsion Conference, VPPC 2011

T2 - 7th IEEE Vehicle Power and Propulsion Conference, VPPC 2011

Y2 - 6 September 2011 through 9 September 2011

ER -

Solid-state disconnects based on SiC power JFETs

Abstract

Publication series

Conference

ASJC Scopus subject areas

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