Strategies for integration of donor electron spin qubits in silicon

T. Schenkel, J. A. Liddle, J. Bokor, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, S. Kwon, Stephen Aplin Lyon, A. M. Tyryshkin, I. W. Rangelow, Y. Sarov, D. H. Schneider, J. Ager, R. de Sousa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

Original languageEnglish (US)
Pages (from-to)1814-1817
Number of pages4
JournalMicroelectronic Engineering
Volume83
Issue number4-9 SPEC. ISS.
DOIs
StatePublished - Apr 1 2006

Fingerprint

Silicon
electron spin
Ion implantation
ion implantation
Electrons
silicon
Oxides
Paramagnetic resonance
readout
Hydrogen
electron paramagnetic resonance
Microscopes
electrons
alignment
microscopes
Scanning
scanning
oxides
hydrogen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Schenkel, T., Liddle, J. A., Bokor, J., Persaud, A., Park, S. J., Shangkuan, J., ... de Sousa, R. (2006). Strategies for integration of donor electron spin qubits in silicon. Microelectronic Engineering, 83(4-9 SPEC. ISS.), 1814-1817. https://doi.org/10.1016/j.mee.2006.01.234
Schenkel, T. ; Liddle, J. A. ; Bokor, J. ; Persaud, A. ; Park, S. J. ; Shangkuan, J. ; Lo, C. C. ; Kwon, S. ; Lyon, Stephen Aplin ; Tyryshkin, A. M. ; Rangelow, I. W. ; Sarov, Y. ; Schneider, D. H. ; Ager, J. ; de Sousa, R. / Strategies for integration of donor electron spin qubits in silicon. In: Microelectronic Engineering. 2006 ; Vol. 83, No. 4-9 SPEC. ISS. pp. 1814-1817.
@article{ea4690fea26849fc9757a939369e1d73,
title = "Strategies for integration of donor electron spin qubits in silicon",
abstract = "Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.",
author = "T. Schenkel and Liddle, {J. A.} and J. Bokor and A. Persaud and Park, {S. J.} and J. Shangkuan and Lo, {C. C.} and S. Kwon and Lyon, {Stephen Aplin} and Tyryshkin, {A. M.} and Rangelow, {I. W.} and Y. Sarov and Schneider, {D. H.} and J. Ager and {de Sousa}, R.",
year = "2006",
month = "4",
day = "1",
doi = "https://doi.org/10.1016/j.mee.2006.01.234",
language = "English (US)",
volume = "83",
pages = "1814--1817",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "4-9 SPEC. ISS.",

}

Schenkel, T, Liddle, JA, Bokor, J, Persaud, A, Park, SJ, Shangkuan, J, Lo, CC, Kwon, S, Lyon, SA, Tyryshkin, AM, Rangelow, IW, Sarov, Y, Schneider, DH, Ager, J & de Sousa, R 2006, 'Strategies for integration of donor electron spin qubits in silicon', Microelectronic Engineering, vol. 83, no. 4-9 SPEC. ISS., pp. 1814-1817. https://doi.org/10.1016/j.mee.2006.01.234

Strategies for integration of donor electron spin qubits in silicon. / Schenkel, T.; Liddle, J. A.; Bokor, J.; Persaud, A.; Park, S. J.; Shangkuan, J.; Lo, C. C.; Kwon, S.; Lyon, Stephen Aplin; Tyryshkin, A. M.; Rangelow, I. W.; Sarov, Y.; Schneider, D. H.; Ager, J.; de Sousa, R.

In: Microelectronic Engineering, Vol. 83, No. 4-9 SPEC. ISS., 01.04.2006, p. 1814-1817.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strategies for integration of donor electron spin qubits in silicon

AU - Schenkel, T.

AU - Liddle, J. A.

AU - Bokor, J.

AU - Persaud, A.

AU - Park, S. J.

AU - Shangkuan, J.

AU - Lo, C. C.

AU - Kwon, S.

AU - Lyon, Stephen Aplin

AU - Tyryshkin, A. M.

AU - Rangelow, I. W.

AU - Sarov, Y.

AU - Schneider, D. H.

AU - Ager, J.

AU - de Sousa, R.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

AB - Spins of electrons bound to donor electrons are attractive candidates for exploration of quantum information processing in silicon. We present results from our development of donor electron spin qubit structures. Donors are placed into isotopically enriched 28Si by ion implantation. The coherence properties of donor implants in pre-device structures are probed by pulsed electron spin resonance (ESR). The spin de-coherence time, T2, for 121Sb donors implanted into a peak depth of 50 nm from a thermal oxide interface is 0.3 ms at 5 K, increasing to 0.75 ms when the silicon surface is passivated with hydrogen. A technique for formation of donor arrays by ion implantation with scanning force microscope alignment is presented, and we discuss coherence limiting factors with respect to the implementation of a single spin readout scheme.

UR - http://www.scopus.com/inward/record.url?scp=33646053487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646053487&partnerID=8YFLogxK

U2 - https://doi.org/10.1016/j.mee.2006.01.234

DO - https://doi.org/10.1016/j.mee.2006.01.234

M3 - Article

VL - 83

SP - 1814

EP - 1817

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 4-9 SPEC. ISS.

ER -

Schenkel T, Liddle JA, Bokor J, Persaud A, Park SJ, Shangkuan J et al. Strategies for integration of donor electron spin qubits in silicon. Microelectronic Engineering. 2006 Apr 1;83(4-9 SPEC. ISS.):1814-1817. https://doi.org/10.1016/j.mee.2006.01.234