Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing

M. S. Carroll, Y. S. Suh, Roland Levy

Research output: Contribution to conferencePaper

Abstract

The silicon surface can be the dominant point defect recombination/ generation site for the silicon bulk in many annealing conditions. The presence of SiGe at the surface has been reported to suppress oxidation enhanced boron diffusion in the underlying bulk silicon. Little, however, has been reported about the quantitative effects of strained SiGe surfaces on dopant diffusion although the strain and composition may perturb the equilibrium point defect concentrations in the surface region. In this work, boron diffusion marker layers were epitaxially grown in silicon by rapid thermal chemical vapor deposition followed by an undoped capping layer of either silicon, 45 nm of Si 0.75Ge 0.25, or 5 nm of Si 0.55Ge 0.45. The boron diffusion in the epitaxially grown silicon was subsequently examined after annealing in nitrogen at temperatures between 750 - 825°C, and the boron diffusivity below the Si 1-xGe x, surface layers was found to be between 2 - 3 times slower than that in the all-silicon samples. The activation energy for the boron diffusivity in the SiGe capped samples was, furthermore, observed to increase by as much as 0.65 eV in the Si 0.75Ge 0.25 capped case, comparable to increases in activation energies reported for the boron diffusivity within strained Si 1-xGe x containing similar germanium concentrations and strain. This work demonstrates that a Si 1-xGe x surface can have a non-local effect on boron diffusion in silicon below it during nitrogen annealing.

Original languageEnglish (US)
Pages446-454
Number of pages9
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

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boron
nitrogen
annealing
silicon
diffusivity
point defects
activation energy
markers
germanium
surface layers
vapor deposition
oxidation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Carroll, M. S., Suh, Y. S., & Levy, R. (2005). Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing. 446-454. Paper presented at 207th ECS Meeting, Quebec, Canada.
Carroll, M. S. ; Suh, Y. S. ; Levy, Roland. / Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing. Paper presented at 207th ECS Meeting, Quebec, Canada.9 p.
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abstract = "The silicon surface can be the dominant point defect recombination/ generation site for the silicon bulk in many annealing conditions. The presence of SiGe at the surface has been reported to suppress oxidation enhanced boron diffusion in the underlying bulk silicon. Little, however, has been reported about the quantitative effects of strained SiGe surfaces on dopant diffusion although the strain and composition may perturb the equilibrium point defect concentrations in the surface region. In this work, boron diffusion marker layers were epitaxially grown in silicon by rapid thermal chemical vapor deposition followed by an undoped capping layer of either silicon, 45 nm of Si 0.75Ge 0.25, or 5 nm of Si 0.55Ge 0.45. The boron diffusion in the epitaxially grown silicon was subsequently examined after annealing in nitrogen at temperatures between 750 - 825°C, and the boron diffusivity below the Si 1-xGe x, surface layers was found to be between 2 - 3 times slower than that in the all-silicon samples. The activation energy for the boron diffusivity in the SiGe capped samples was, furthermore, observed to increase by as much as 0.65 eV in the Si 0.75Ge 0.25 capped case, comparable to increases in activation energies reported for the boron diffusivity within strained Si 1-xGe x containing similar germanium concentrations and strain. This work demonstrates that a Si 1-xGe x surface can have a non-local effect on boron diffusion in silicon below it during nitrogen annealing.",
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Carroll, MS, Suh, YS & Levy, R 2005, 'Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing' Paper presented at 207th ECS Meeting, Quebec, Canada, 5/16/05 - 5/20/05, pp. 446-454.

Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing. / Carroll, M. S.; Suh, Y. S.; Levy, Roland.

2005. 446-454 Paper presented at 207th ECS Meeting, Quebec, Canada.

Research output: Contribution to conferencePaper

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N2 - The silicon surface can be the dominant point defect recombination/ generation site for the silicon bulk in many annealing conditions. The presence of SiGe at the surface has been reported to suppress oxidation enhanced boron diffusion in the underlying bulk silicon. Little, however, has been reported about the quantitative effects of strained SiGe surfaces on dopant diffusion although the strain and composition may perturb the equilibrium point defect concentrations in the surface region. In this work, boron diffusion marker layers were epitaxially grown in silicon by rapid thermal chemical vapor deposition followed by an undoped capping layer of either silicon, 45 nm of Si 0.75Ge 0.25, or 5 nm of Si 0.55Ge 0.45. The boron diffusion in the epitaxially grown silicon was subsequently examined after annealing in nitrogen at temperatures between 750 - 825°C, and the boron diffusivity below the Si 1-xGe x, surface layers was found to be between 2 - 3 times slower than that in the all-silicon samples. The activation energy for the boron diffusivity in the SiGe capped samples was, furthermore, observed to increase by as much as 0.65 eV in the Si 0.75Ge 0.25 capped case, comparable to increases in activation energies reported for the boron diffusivity within strained Si 1-xGe x containing similar germanium concentrations and strain. This work demonstrates that a Si 1-xGe x surface can have a non-local effect on boron diffusion in silicon below it during nitrogen annealing.

AB - The silicon surface can be the dominant point defect recombination/ generation site for the silicon bulk in many annealing conditions. The presence of SiGe at the surface has been reported to suppress oxidation enhanced boron diffusion in the underlying bulk silicon. Little, however, has been reported about the quantitative effects of strained SiGe surfaces on dopant diffusion although the strain and composition may perturb the equilibrium point defect concentrations in the surface region. In this work, boron diffusion marker layers were epitaxially grown in silicon by rapid thermal chemical vapor deposition followed by an undoped capping layer of either silicon, 45 nm of Si 0.75Ge 0.25, or 5 nm of Si 0.55Ge 0.45. The boron diffusion in the epitaxially grown silicon was subsequently examined after annealing in nitrogen at temperatures between 750 - 825°C, and the boron diffusivity below the Si 1-xGe x, surface layers was found to be between 2 - 3 times slower than that in the all-silicon samples. The activation energy for the boron diffusivity in the SiGe capped samples was, furthermore, observed to increase by as much as 0.65 eV in the Si 0.75Ge 0.25 capped case, comparable to increases in activation energies reported for the boron diffusivity within strained Si 1-xGe x containing similar germanium concentrations and strain. This work demonstrates that a Si 1-xGe x surface can have a non-local effect on boron diffusion in silicon below it during nitrogen annealing.

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Carroll MS, Suh YS, Levy R. Suppressed boron diffusion in bulk silicon below strained (100) Si 1-xGe x surfaces during nitrogen annealing. 2005. Paper presented at 207th ECS Meeting, Quebec, Canada.