Surface acoustic waves in ZnO/Al xGa 1-xN/C-Al 2O 3 structures

Ying Chen; N. W. Emanetoglu; Yimin Chen; G. Saraf; Y. Lu; A. Parekh; V. Merai; M. Prophristic; D. Lu; D. S. Lee; E. A. Armour

Surface acoustic waves in ZnO/Al _xGa _1-xN/C-Al ₂O ₃ structures

Ying Chen, N. W. Emanetoglu, Yimin Chen, G. Saraf, Y. Lu, A. Parekh, V. Merai, M. Prophristic, D. Lu, D. S. Lee, E. A. Armour

Engn - Elec & Computer Engn

Rutgers, The State University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Piezoelectric AIN and ternary Al _xGa _1-xN thin films deposited on (0001) C-plane sapphire substrates are attractive for low-loss and high frequency surface acoustic wave (SAW) devices. However, growth of epitaxial quality AlN films is difficult due to strong parasitic gas phase reactions between precursors. On the other hand, ZnO is a well-known piezoelectric material with high electromechanical coupling coefficients. Furthermore, high quality epitaxial ZnO films can be grown at temperatures hundreds of degrees lower than AlN. By depositing piezoelectric ZnO and AlN multilayer structures on C-plane sapphire substrates, large coupling coefficient and high SAW velocity can be obtained. In this work, ZnO/Al _xGa _1-xN multilayer structures were epitaxially grown on C-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). SAW devices were fabricated and tested, which exhibited good agreement between theoretical and experimental results. The SAW velocity and coupling coefficients of the ZnO/ Al _xGa _1-xN(0≤x≤1)/C-Al ₂O ₃ multilayer systems are analyzed as a function of the Al mole percentage, x in Al _xGa _1-xN, and of the ZnO (h ₁) to Al _xGa _1-xN (h ₂) thickness ratio. It has been found that the hf region where the coupling coefficient is close to k ² _max broadens with increasing Al content, while k ² _max decreases slightly. When the thickness ratio h ₁/h ₂ is 0.5, a wide hf region where coupling is close to k ² _max is obtained.

Original language	English (US)
Pages (from-to)	2130-2133
Number of pages	4
Journal	Proceedings of the IEEE Ultrasonics Symposium
Volume	2
State	Published - 2003
Event	2003 IEEE Ultrasonics Symposium - Proceedings - Honolulu, HI, United States Duration: Oct 5 2003 → Oct 8 2003

ASJC Scopus subject areas

Acoustics and Ultrasonics

Cite this

@article{cc83bca6628440fc9aa3c3b28f987c9f,

title = "Surface acoustic waves in ZnO/Al xGa 1-xN/C-Al 2O 3 structures",

abstract = "Piezoelectric AIN and ternary Al xGa 1-xN thin films deposited on (0001) C-plane sapphire substrates are attractive for low-loss and high frequency surface acoustic wave (SAW) devices. However, growth of epitaxial quality AlN films is difficult due to strong parasitic gas phase reactions between precursors. On the other hand, ZnO is a well-known piezoelectric material with high electromechanical coupling coefficients. Furthermore, high quality epitaxial ZnO films can be grown at temperatures hundreds of degrees lower than AlN. By depositing piezoelectric ZnO and AlN multilayer structures on C-plane sapphire substrates, large coupling coefficient and high SAW velocity can be obtained. In this work, ZnO/Al xGa 1-xN multilayer structures were epitaxially grown on C-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). SAW devices were fabricated and tested, which exhibited good agreement between theoretical and experimental results. The SAW velocity and coupling coefficients of the ZnO/ Al xGa 1-xN(0≤x≤1)/C-Al 2O 3 multilayer systems are analyzed as a function of the Al mole percentage, x in Al xGa 1-xN, and of the ZnO (h 1) to Al xGa 1-xN (h 2) thickness ratio. It has been found that the hf region where the coupling coefficient is close to k 2 max broadens with increasing Al content, while k 2 max decreases slightly. When the thickness ratio h 1/h 2 is 0.5, a wide hf region where coupling is close to k 2 max is obtained.",

author = "Ying Chen and Emanetoglu, {N. W.} and Yimin Chen and G. Saraf and Y. Lu and A. Parekh and V. Merai and M. Prophristic and D. Lu and Lee, {D. S.} and Armour, {E. A.}",

year = "2003",

language = "English (US)",

volume = "2",

pages = "2130--2133",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE Ultrasonics Symposium - Proceedings ; Conference date: 05-10-2003 Through 08-10-2003",

}

TY - JOUR

T1 - Surface acoustic waves in ZnO/Al xGa 1-xN/C-Al 2O 3 structures

AU - Chen, Ying

AU - Emanetoglu, N. W.

AU - Chen, Yimin

AU - Saraf, G.

AU - Lu, Y.

AU - Parekh, A.

AU - Merai, V.

AU - Prophristic, M.

AU - Lu, D.

AU - Lee, D. S.

AU - Armour, E. A.

PY - 2003

Y1 - 2003

N2 - Piezoelectric AIN and ternary Al xGa 1-xN thin films deposited on (0001) C-plane sapphire substrates are attractive for low-loss and high frequency surface acoustic wave (SAW) devices. However, growth of epitaxial quality AlN films is difficult due to strong parasitic gas phase reactions between precursors. On the other hand, ZnO is a well-known piezoelectric material with high electromechanical coupling coefficients. Furthermore, high quality epitaxial ZnO films can be grown at temperatures hundreds of degrees lower than AlN. By depositing piezoelectric ZnO and AlN multilayer structures on C-plane sapphire substrates, large coupling coefficient and high SAW velocity can be obtained. In this work, ZnO/Al xGa 1-xN multilayer structures were epitaxially grown on C-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). SAW devices were fabricated and tested, which exhibited good agreement between theoretical and experimental results. The SAW velocity and coupling coefficients of the ZnO/ Al xGa 1-xN(0≤x≤1)/C-Al 2O 3 multilayer systems are analyzed as a function of the Al mole percentage, x in Al xGa 1-xN, and of the ZnO (h 1) to Al xGa 1-xN (h 2) thickness ratio. It has been found that the hf region where the coupling coefficient is close to k 2 max broadens with increasing Al content, while k 2 max decreases slightly. When the thickness ratio h 1/h 2 is 0.5, a wide hf region where coupling is close to k 2 max is obtained.

AB - Piezoelectric AIN and ternary Al xGa 1-xN thin films deposited on (0001) C-plane sapphire substrates are attractive for low-loss and high frequency surface acoustic wave (SAW) devices. However, growth of epitaxial quality AlN films is difficult due to strong parasitic gas phase reactions between precursors. On the other hand, ZnO is a well-known piezoelectric material with high electromechanical coupling coefficients. Furthermore, high quality epitaxial ZnO films can be grown at temperatures hundreds of degrees lower than AlN. By depositing piezoelectric ZnO and AlN multilayer structures on C-plane sapphire substrates, large coupling coefficient and high SAW velocity can be obtained. In this work, ZnO/Al xGa 1-xN multilayer structures were epitaxially grown on C-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). SAW devices were fabricated and tested, which exhibited good agreement between theoretical and experimental results. The SAW velocity and coupling coefficients of the ZnO/ Al xGa 1-xN(0≤x≤1)/C-Al 2O 3 multilayer systems are analyzed as a function of the Al mole percentage, x in Al xGa 1-xN, and of the ZnO (h 1) to Al xGa 1-xN (h 2) thickness ratio. It has been found that the hf region where the coupling coefficient is close to k 2 max broadens with increasing Al content, while k 2 max decreases slightly. When the thickness ratio h 1/h 2 is 0.5, a wide hf region where coupling is close to k 2 max is obtained.

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M3 - Conference article

VL - 2

SP - 2130

EP - 2133

JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

SN - 1051-0117

T2 - 2003 IEEE Ultrasonics Symposium - Proceedings

Y2 - 5 October 2003 through 8 October 2003

ER -

Surface acoustic waves in ZnO/Al _xGa _1-xN/C-Al ₂O ₃ structures

Abstract

ASJC Scopus subject areas

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