Abstract
Two different 6H-SiC thyristors, one with a 6.5 μm n-type blocking layer and the other with a 8 μm p-type blocking layer have been fabricated and characterized. The transient switching characteristics of these SiC thyristors were investigated using both optical and electrical gate triggering. A forward breakover voltage of 100 V for the thyristor with the n-type blocking layer and 600 V for the thyristor with p-type blocking layer are reported. The maximum switched current density as high as 2000 A/cm2 is demonstrated in the SiC thyristor with n-type blocking layer. The forward breakover voltage of the 100 V thyristor is found to decrease by only 20% when operating temperature is increased from room temperature to 300 °C, while the rise time increases from 43 ns to 195 ns.
| Original language | American English |
|---|---|
| Pages (from-to) | 415-418 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1994 |
| Event | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 11 1994 → Dec 14 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry