We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Ceramics and Composites
- Materials Chemistry