The steady state hole mobility lifetime product in undoped a-Si:H

J. Z. Liu, A. Maruyama, S. Wagner, A. Delahoy

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We have applied the steady state photocarrier grating technique to study the hole mobility lifetime product (μτ)p near the room temperature in undoped a-Si:H. The dependences of (μτ)p on temperature and generation rate fit well the theoretical relation derived here. The low activation energy of (μτ)p is due to the strong temperature dependence of the quasi-Fermi level for the holes.

Original languageEnglish (US)
Pages (from-to)363-365
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
StatePublished - Dec 1 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Ceramics and Composites
  • Materials Chemistry

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