Abstract
Diamond (Dia) films are promising heat-dissipative materials for electronic packages because they combine high thermal conductivity with high electrical resistivity. However, precise knowledge of the thermal properties of the diamond films is crucial to their potential application as passive thermal management substrates in electronics. In this study, modulated photothermal radiometry in a front-face configuration was employed to thermally characterize polycrystalline diamond films deposited onto silicon (Si) substrates through laser-assisted combustion synthesis. The intrinsic thermal conductivity of diamond films and the thermal boundary resistance at the interface between the diamond film and the Si substrate were investigated. The results enlighten the correlation between the deposition process, film purity, film transverse thermal conductivity, and interface thermal resistance.
Original language | American English |
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Pages (from-to) | 2095-2102 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 6 |
Issue number | 3 |
DOIs | |
State | Published - Feb 12 2014 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
Keywords
- diamond films
- heat conduction
- interface
- laser-assisted combustion synthesis