Polycrystalline samples of CoAsSb were prepared by annealing a stoichiometric mixture of the elements at 1073 K for 2 weeks. Synchrotron powder X-ray diffraction refinement indicated that CoAsSb adopts arsenopyrite-type structure with space group P21/c. Sb vacancies were observed by both elemental and structural analysis, which indicate CoAsSb0.883 composition. CoAsSb was thermally stable up to 1073 K without structure change but decomposed at 1168 K. Thermoelectric properties were measured from 300 to 1000 K on a dense pellet. Electrical resistivity measurements revealed that CoAsSb is a narrow-band-gap semiconductor. The negative Seebeck coefficient indicated that CoAsSb is an n-type semiconductor, with the maximum value of -132 μV/K at 450 K. The overall thermal conductivity is between 2.9 and 6.0 W/(m K) in the temperature range 300-1000 K, and the maximum value of figure of merit, zT, reaches 0.13 at 750 K. First-principles calculations of the electrical resistivity and Seebeck coefficient confirmed n-type semiconductivity, with a calculated maximum Seebeck coefficient of -87 μV/K between 900 and 1000 K. The difference between experimental and calculated Seebeck coefficient was attributed to the Sb vacancies in the structure. The calculated electronic thermal conductivity is close to the experimental total thermal conductivity, and the estimated theoretical zT based solely on electronic thermal conductivity agrees with experimental values in the high temperature range, above 800 K. The effects of Sb vacancies on the electronic and transport properties are discussed.
All Science Journal Classification (ASJC) codes
- Materials Chemistry
- Chemical Engineering(all)