Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films

S. C. Lee, R. D. Schrimpf, K. F. Galloway, G. Teowee, D. P. Birnie, D. R. Uhlmann

Research output: Contribution to journalArticle

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Abstract

Sol-Gel derived PZT thin films were irradiated to a total-dose of 1 Mrad(Si), or 86 krad(PZT), under open circuit bias. An asymmetric distortion in the hysteresis curves was observed. The distortion depends on the polarization state of the capacitor before irradiation. Post-irradiation electrical cycling makes the hysteresis loops symmetric initially, but results in fatigue effects. The leakage and switching current behavior after irradiation and post-rad cycling were studied using a static current vs. voltage measurement. Mechanisms of radiation-induced distortion and the fatigue effect during post-rad cycling are discussed.

Original languageEnglish (US)
Pages (from-to)2036-2043
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume39
Issue number6
DOIs
StatePublished - Dec 1992

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

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    Lee, S. C., Schrimpf, R. D., Galloway, K. F., Teowee, G., Birnie, D. P., & Uhlmann, D. R. (1992). Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films. IEEE Transactions on Nuclear Science, 39(6), 2036-2043. https://doi.org/10.1109/23.211401