Transient-enhanced diffusion in shallow-junction formation

Anthony T. Fiory, S. G. Chawda, S. Madishetty, V. R. Mehta, N. Ravindra, S. P. McCoy, M. E. Lefrançois, K. K. Bourdelle, J. M. McKinley, H. J.L. Gossmann, A. Agarwal

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

Original languageEnglish (US)
Pages (from-to)999-1003
Number of pages5
JournalJournal of Electronic Materials
Volume31
DOIs
StatePublished - Jan 1 2002

Fingerprint

spikes
annealing
Chemical activation
Doping (additives)
activation
Annealing
Rapid thermal annealing
Sheet resistance
Ion implantation
Hall effect
ion implantation
interstitials
Diodes
leakage
mass spectroscopy
diodes
Spectroscopy
Ions
Crystalline materials
dosage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Electrical activation
  • Ion implantation
  • Spike annealing

Cite this

Fiory, A. T., Chawda, S. G., Madishetty, S., Mehta, V. R., Ravindra, N., McCoy, S. P., ... Agarwal, A. (2002). Transient-enhanced diffusion in shallow-junction formation. Journal of Electronic Materials, 31, 999-1003. https://doi.org/10.1007/s11664-002-0034-6
Fiory, Anthony T. ; Chawda, S. G. ; Madishetty, S. ; Mehta, V. R. ; Ravindra, N. ; McCoy, S. P. ; Lefrançois, M. E. ; Bourdelle, K. K. ; McKinley, J. M. ; Gossmann, H. J.L. ; Agarwal, A. / Transient-enhanced diffusion in shallow-junction formation. In: Journal of Electronic Materials. 2002 ; Vol. 31. pp. 999-1003.
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Fiory, AT, Chawda, SG, Madishetty, S, Mehta, VR, Ravindra, N, McCoy, SP, Lefrançois, ME, Bourdelle, KK, McKinley, JM, Gossmann, HJL & Agarwal, A 2002, 'Transient-enhanced diffusion in shallow-junction formation', Journal of Electronic Materials, vol. 31, pp. 999-1003. https://doi.org/10.1007/s11664-002-0034-6

Transient-enhanced diffusion in shallow-junction formation. / Fiory, Anthony T.; Chawda, S. G.; Madishetty, S.; Mehta, V. R.; Ravindra, N.; McCoy, S. P.; Lefrançois, M. E.; Bourdelle, K. K.; McKinley, J. M.; Gossmann, H. J.L.; Agarwal, A.

In: Journal of Electronic Materials, Vol. 31, 01.01.2002, p. 999-1003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Transient-enhanced diffusion in shallow-junction formation

AU - Fiory, Anthony T.

AU - Chawda, S. G.

AU - Madishetty, S.

AU - Mehta, V. R.

AU - Ravindra, N.

AU - McCoy, S. P.

AU - Lefrançois, M. E.

AU - Bourdelle, K. K.

AU - McKinley, J. M.

AU - Gossmann, H. J.L.

AU - Agarwal, A.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

AB - Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As+ implants is favorable for shallow-junction formation with spike annealing.

KW - Electrical activation

KW - Ion implantation

KW - Spike annealing

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