Uniform patterned growth of carbon nanotubes without surface carbon

K. B.K. Teo; G. A.J. Amaratunga; W. I. Milne; D. G. Hasko; G. Pirio; P. Legagneux; F. Wyczisk; D. Pribat

doi:https://doi.org/10.1063/1.1400085

Uniform patterned growth of carbon nanotubes without surface carbon

K. B.K. Teo, G. A.J. Amaratunga, W. I. Milne, D. G. Hasko, G. Pirio, P. Legagneux, F. Wyczisk, D. Pribat

School of Engineering, Materials Science & Engineering

Rutgers, The State University

Research output: Contribution to journal › Article › peer-review

322 Scopus citations

Abstract

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C₂H₂) to etching (ammonia, NH₃) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.

Original language	American English
Pages (from-to)	1534-1536
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1400085
State	Published - Sep 3 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Uniform patterned growth of carbon nanotubes without surface carbon",

abstract = "In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.",

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AU - Teo, K. B.K.

AU - Amaratunga, G. A.J.

AU - Milne, W. I.

AU - Hasko, D. G.

AU - Pirio, G.

AU - Legagneux, P.

AU - Wyczisk, F.

AU - Pribat, D.

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N2 - In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.

AB - In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.

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Uniform patterned growth of carbon nanotubes without surface carbon

Abstract

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