Voltage-pulse-induced switching dynamics in VO2 thin-film devices on silicon

Giwan Seo; Bong Jun Kim; Changhyun Ko; Yanjie Cui; Yong Wook Lee; Jun Hwan Shin; Shriram Ramanathan; Hyun Tak Kim

doi:10.1109/LED.2011.2163922

Voltage-pulse-induced switching dynamics in VO₂ thin-film devices on silicon

Giwan Seo, Bong Jun Kim, Changhyun Ko, Yanjie Cui, Yong Wook Lee, Jun Hwan Shin, Shriram Ramanathan, Hyun Tak Kim

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO₂ thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.

Original language	American English
Article number	6020734
Pages (from-to)	1582-1584
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2163922
State	Published - Nov 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

MIT switching characteristics
Metal-insulator transition (MIT)
Oxide electronics
VO
Vanadium dioxide

Access to Document

10.1109/LED.2011.2163922

Cite this

@article{15c42d4f877b40ebbbd6b084a9d7add3,

title = "Voltage-pulse-induced switching dynamics in VO2 thin-film devices on silicon",

abstract = "We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.",

keywords = "MIT switching characteristics, Metal-insulator transition (MIT), Oxide electronics, VO, Vanadium dioxide",

author = "Giwan Seo and Kim, \{Bong Jun\} and Changhyun Ko and Yanjie Cui and Lee, \{Yong Wook\} and Shin, \{Jun Hwan\} and Shriram Ramanathan and Kim, \{Hyun Tak\}",

note = "Funding Information: Manuscript received November 2, 2004; accepted May 19, 2005. The financial assistance provided by the National Science Council Taiwan under contract NSC 93-2212-E-020-007 is gratefully acknowledged.",

year = "2011",

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doi = "10.1109/LED.2011.2163922",

language = "American English",

volume = "32",

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journal = "IEEE Electron Device Letters",

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T1 - Voltage-pulse-induced switching dynamics in VO2 thin-film devices on silicon

AU - Seo, Giwan

AU - Kim, Bong Jun

AU - Ko, Changhyun

AU - Cui, Yanjie

AU - Lee, Yong Wook

AU - Shin, Jun Hwan

AU - Ramanathan, Shriram

AU - Kim, Hyun Tak

N1 - Funding Information: Manuscript received November 2, 2004; accepted May 19, 2005. The financial assistance provided by the National Science Council Taiwan under contract NSC 93-2212-E-020-007 is gratefully acknowledged.

PY - 2011/11

Y1 - 2011/11

N2 - We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.

AB - We demonstrate the characteristics of voltage-pulse-induced out-of-plane switching driven by metal-insulator transition (MIT jump) with VO2 thin-film devices fabricated on silicon. As the peak of a triangular pulse increases, the delay time from the insulating state to the metallic state linearly decreases and is independent of change in external resistance. The intrinsic rising time is less than 170 ns. An endurance test with continuous voltage pulse shows reliability without breakdown for more than 110 h. This work contributes to correlated oxide electronics utilizing phase transition layers.

KW - MIT switching characteristics

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