TY - JOUR
T1 - Wafer temperature measurements and end-point detection during plasma etching by thermal imaging
AU - Patel, V.
AU - Patel, M.
AU - Ayyagari, S.
AU - Kosonocky, W. F.
AU - Misra, D.
AU - Singh, B.
PY - 1991
Y1 - 1991
N2 - Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end-point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat-transfer coefficient of the thermal contact between the silicon wafer and the water-cooled electrode can be determined.
AB - Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end-point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat-transfer coefficient of the thermal contact between the silicon wafer and the water-cooled electrode can be determined.
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U2 - https://doi.org/10.1063/1.105480
DO - https://doi.org/10.1063/1.105480
M3 - Article
VL - 59
SP - 1299
EP - 1301
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -