X-ray induced persistent photoconductivity in Si-doped Al_0.35Ga_0.65As

TY - JOUR

T1 - X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As

AU - Soh, Yeong Ah

AU - Aeppli, G.

AU - Zimmermann, Frank M.

AU - Isaacs, E. D.

AU - Frenkel, Anatoly I.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - We demonstrate that x-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of DX centers. A high quantum yield (≫1) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.

AB - We demonstrate that x-ray irradiation can be used to induce an insulator-metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K edge, implying that core-hole excitation of Ga and As are efficient primary steps for the excitation of DX centers. A high quantum yield (≫1) suggests that the excitation is indirect and nonlocal, due to secondary electrons, holes, and fluorescence photons.

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U2 - 10.1063/1.1410894

DO - 10.1063/1.1410894

M3 - Article

SN - 0021-8979

VL - 90

SP - 6172

EP - 6176

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -